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Fabrication of modern semiconductor devices such as logic, memory, and other integrated circuit devices typically involves many steps. In a typical photolithography process, for example, photoresist is spun onto the surface of a silicon wafer substrate and is then selectively exposed to ultraviolet light. After exposure, the photoresist is chemically developed to remove either the exposed portions or the unexposed portions. The remaining portions of photoresist may be used as a mask for etching or other process steps.
The integrated circuit industry is continually striving to produce ever faster devices using a variety of materials. The formation of thin films of metal, oxide, and other semiconductors is one of the most important steps during the fabrication of semiconductor devices. Thin films are used to insulate the various components of a device, to conduct electricity between devices, and to form the wiring that connects devices to one another. In many cases, the critical dimensions of the resulting device are only limited by the resolution of the available exposure tools.
However, even as exposure tools improve, some problems associated with the formation of thin films persist. When a photoresist is exposed to ultraviolet light, for example, some of the light is reflected off of the surface of the wafer back to the photoresist. The reflected light interferes with the exposure, reducing the fidelity of the resulting image and causing the resulting film to have a thickness that is less than the desired thickness.
To overcome this problem, an anti-reflective coating may be applied to the wafer prior to the application of the photoresist. The anti-reflective coating absorbs the incident light, reducing the amount of light reflected. The anti-reflective coating may ac619d1d87
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